Ion implantation technology refers to doping boron, phosphorus and arsenic plasma on the surface of semiconductor wafers to change its electrical characteristics and device conductivity, or to use non-doped elements such as germanium and carbon to achieve the goal of modifying the surface properties of wafer materials. The ion source is the core component of the ion implanter, mainly composed of various tungsten and molybdenum components. The ion implantation industry has very stringent requirements for impurity elements. Any excess of impurity elements may cause contamination and failure of ion implantation materials. Therefore, tungsten or molybdenum materials for ion implantation must first meet their strict requirements for chemical purity .